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IXFH26N100X, IXFT26N100XHV Datasheet - IXYS

IXFH26N100X Power MOSFET

X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFT26N100XHV IXFH26N100X VDSS = ID25 = RDS(on) 1000V 26A 320m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature f.

IXFT26N100XHV-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXFH26N100X, IXFT26N100XHV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXFH26N100X, IXFT26N100XHV

Manufacturer:

IXYS

File Size:

323.79 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFH26N100X, IXFT26N100XHV.
Please refer to the document for exact specifications by model.

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TAGS

IXFH26N100X IXFT26N100XHV Power MOSFET IXYS

IXFH26N100X Distributor