IXFH26N60 - Power MOSFETs
HiPerFETTM Power MOSFETs IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data V DSS I D25 600 V 26 A 600 V 28 A trr £ 250 ns R DS(on) 0.25 W 0.25 W Symbol VDSS VDGR V GS VGSM I D25 I DM I AR EAR EAS dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient T C = 25°C, Chip capability T C = 25°C, pulse width limited by T JM T C = 25°C TC = 25°C TC .
IXFH26N60 Features
* International standard packages
* EpoxymeetUL94V-0, flammability
classification
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Avalanche energy and current rated
* Fast intrinsic Rectifier
Advantages
* Easy to mount
