* International standard packages
* EpoxymeetUL94V-0, flammability classification
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Avalanche energy and current rated
* Fast intrinsic Rectifier Advantages
* Easy to mount
IXFH26N60 Datasheet (69.59 KB)
IXFH26N60
IXYS
69.59 KB
Power mosfets.
HiPerFETTM Power MOSFETs
IXFH 26N60/IXFT 26N60 IXFK 28N60
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
V DSS
.
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