* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFH35N30 Datasheet (670.14 KB)
IXFH35N30
IXYS Corporation
670.14 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM35N30 IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 .
📁 Related Datasheet
IXFH35N30 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH30N40Q Power MOSFET (IXYS)
IXFH30N50 HiPerFET Power MOSFETs (IXYS)
IXFH30N50 Power MOSFET (IXYS)
IXFH30N50P Power MOSFET (IXYS)
IXFH30N50Q3 Power MOSFET (IXYS Corporation)
IXFH30N60P Power MOSFET (IXYS)
IXFH30N60Q Power MOSFET (IXYS)
IXFH30N60X Power MOSFET (IXYS)
IXFH30N60X N-Channel MOSFET (INCHANGE)
