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IXFT50N60P3 Datasheet - IXYS Corporation

IXFT50N60P3 - Power MOSFET

Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-

IXFT50N60P3 Features

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* Laser Drivers

* AC a

IXFT50N60P3_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFT50N60P3

Manufacturer:

IXYS Corporation

File Size:

153.44 KB

Description:

Power mosfet.

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IXFT50N60P3 Power MOSFET IXYS Corporation