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IXFT50N30Q3 Datasheet - IXYS

IXFT50N30Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT50N30Q3 IXFH50N30Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting To.

IXFT50N30Q3 Features

* Low Intrinsic Gate Resistance

* International Standard Packages

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Battery Chargers

IXFT50N30Q3 Datasheet (850.64 KB)

IXFT50N30Q3 Datasheet Preview — Preview of IXFT50N30Q3 PDF

Datasheet Details

Part number:

IXFT50N30Q3

Manufacturer:

IXYS

File Size:

850.64 KB

Description:

Power mosfet.

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IXFT50N30Q3 Power MOSFET IXYS

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