* Internationalstandardpackages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFT58N20 Datasheet (678.74 KB)
IXFT58N20
IXYS Corporation
678.74 KB
Power mosfet.
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM42N20 IXFM50N20 IXFH/IXFM42N20 IXFH/IXFM/IXFT50.
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