Datasheet Details
Part number:
IXFT58N20, IXFH58N20
Manufacturer:
IXYS Corporation
File Size:
678.74 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFT58N20, IXFH58N20.
Please refer to the document for exact specifications by model.
IXFT58N20, IXFH58N20, Power MOSFET
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM42N20 IXFM50N20 IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 VDSS 200 V 200 V 200 V ID25 42 A 50 A 58 A trr £ 200 ns TO-247 AD (IXFH) RDS(on) 60mW 45mW 40mW Symbol VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg T L Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by
IXFT58N20 Features
* Internationalstandardpackages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
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