www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt
IXFK52N30Q_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFT52N30Q, IXFK52N30Q
Manufacturer:
IXYS Corporation
File Size:
98.81 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFT52N30Q, IXFK52N30Q.
Please refer to the document for exact specifications by model.