IXFT50N85XHV Datasheet - IXYS

IXFT50N85XHV Power MOSFET

X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFT50N85XHV IXFH50N85X IXFK50N85X Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting To.

IXFT50N85XHV Features

* International Standard Packages

* High Voltage Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Convert

IXFT50N85XHV Datasheet (289.27 KB)

IXFT50N85XHV Datasheet Preview — Preview of IXFT50N85XHV PDF

Datasheet Details

Part number:

IXFT50N85XHV

Manufacturer:

IXYS

File Size:

289.27 KB

Description:

Power mosfet.

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IXFT50N85XHV Power MOSFET IXYS

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