IXFX55N50 - Power MOSFETs
HiPerFETTM Power MOSFETs Single Die MOSFET IXFX 50N50 IXFX 55N50 VDSS ID25 500 V 50 A 500 V 55 A t rr ≤ 250 ns RDS(on) 100 mΩ 80 mΩ Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = .
IXFX55N50 Features
* l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect l Fast intrinsic rectifier
Applications
l DC-DC converters l Battery chargers l Switched-mode a