* l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode a
IXFX55N50 Datasheet (92.71 KB)
IXFX55N50
IXYS Corporation
92.71 KB
Power mosfets.
HiPerFETTM Power MOSFETs Single Die MOSFET IXFX 50N50 IXFX 55N50 VDSS ID25 500 V 50 A 500 V 55 A t rr ≤ 250 ns RDS(on) 100 mΩ 80 mΩ Prelimi.
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