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IXFX55N50, IXFX50N50 Datasheet - IXYS Corporation

IXFX55N50 - Power MOSFETs

HiPerFETTM Power MOSFETs Single Die MOSFET IXFX 50N50 IXFX 55N50 VDSS ID25 500 V 50 A 500 V 55 A t rr ≤ 250 ns RDS(on) 100 mΩ 80 mΩ Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = .

IXFX55N50 Features

* l International standard package l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode a

IXFX50N50-IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFX55N50, IXFX50N50. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXFX55N50, IXFX50N50

Manufacturer:

IXYS Corporation

File Size:

92.71 KB

Description:

Power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFX55N50, IXFX50N50.
Please refer to the document for exact specifications by model.

IXFX55N50 Distributor

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