* z RF capable Mosfets z Rugged polysilicon gate cell structure z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Switched-mode and resonant-mod
IXFX55N50F Datasheet (145.67 KB)
IXFX55N50F
IXYS
145.67 KB
Power mosfet.
Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic R.
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