IXFX55N50F, IXFK55N50F Datasheet - IXYS

IXFX55N50F Power MOSFET

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFK55N50F IXFX55N50F VDSS = ID25 = RDS(on) ≤ trr ≤ 500V 55A 85mΩ 250ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C T.

IXFX55N50F Features

* z RF capable Mosfets z Rugged polysilicon gate cell structure z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Switched-mode and resonant-mod

IXFK55N50F-IXYS.pdf