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IXFX62N25 Datasheet - IXYS Corporation

IXFX62N25 - HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 62N25 IXFK 62N25 VDSS ID25 RDS(on) = 250 V = 62 A = 35 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum

IXFX62N25 Features

* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXFX62N25_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFX62N25

Manufacturer:

IXYS Corporation

File Size:

119.39 KB

Description:

Hiperfet power mosfet.

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IXFX62N25 HiPerFET Power MOSFET IXYS Corporation