IXFX66N50Q2 Datasheet - IXYS

IXFX66N50Q2 Power MOSFET

HiPerFETTM Power MOSFETs Q2-Class IXFK66N50Q2 IXFX66N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mountin.

IXFX66N50Q2 Features

* Double metal process for low gate resistance

* International standard packages

* Epoxy meet UL 94 V-0, flammability classification

* Avalanche energy and current rated

* Fast intrinsic Rectifier Advantages

* Easy to mount

* Space savings

IXFX66N50Q2 Datasheet (180.69 KB)

IXFX66N50Q2 Datasheet Preview — Preview of IXFX66N50Q2 PDF

Datasheet Details

Part number:

IXFX66N50Q2

Manufacturer:

IXYS

File Size:

180.69 KB

Description:

Power mosfet.

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IXFX66N50Q2 Power MOSFET IXYS

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