IXFX90N20Q Datasheet - IXYS Corporation

IXFX90N20Q Power MOSFET

HiPerFETTM Power MOSFETs Q-CLASS IXFX 90N20Q IXFK 90N20Q Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t rr V = DSS ID25 = = RDS(on) 200 V 90 A 22 mΩ trr ≤ 200 µs PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Symbol V DSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 2.

IXFX90N20Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive - faster switching

* International standard packages

* Low RDS (on)

* Rated for unclamped Inductive load switching (UIS) rated

* Molding epoxies meet UL 94 V-0 flammabi

IXFX90N20Q_IXYSCorporation.pdf