Datasheet Specifications
- Part number
- IXFX90N30
- Manufacturer
- IXYS Corporation
- File Size
- 125.63 KB
- Datasheet
- IXFX90N30_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) = 300 V = 90 A = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM .
Features
* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unlessApplications
* l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l © 2001 IXYS All rights reserved 98537A (12/0IXFX90N30 Distributors
📁 Related Datasheet
📌 All Tags