* l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
IXFX90N30 Datasheet (125.63 KB)
IXFX90N30
IXYS Corporation
125.63 KB
Power mosfet.
HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 90N30 IXFK 90N30
VDSS ID25
RDS(on)
= 300 V = 90 A = 33 mΩ
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM .
📁 Related Datasheet
IXFX90N20Q Power MOSFET (IXYS Corporation)
IXFX90N60X Power MOSFET (IXYS)
IXFX90N60X N-Channel MOSFET (INCHANGE)
IXFX94N50P2 Power MOSFET (IXYS Corporation)
IXFX100N25 Power MOSFET (IXYS Corporation)
IXFX100N65X2 Power MOSFET (IXYS)
IXFX120N20 Power MOSFET (IXYS)
IXFX120N25 HiPerFET Power MOSFETs (IXYS)
IXFX120N25P PolarHT HiPerFET Power MOSFET (IXYS)
IXFX120N30T GigaMOS Power MOSFET (IXYS)
