IXGH50N60B2 Datasheet - IXYS Corporation

IXGH50N60B2 High Speed IGBTs

HiPerFASTTM IGBT B2-Class High Speed IGBTs IXGH 50N60B2 IXGT 50N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.0 V = 65 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 80 400 -55 +150 150 -55 +150 300 V V V V A A A A W °C °C °C °C VCES .

IXGH50N60B2 Features

* z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications z z Symbol Test Conditions Cha

IXGH50N60B2_IXYSCorporation.pdf