IXGH56N60B3 Datasheet - IXYS

IXGH56N60B3 Medium-Speed Low Vsat PT IGBT

Advance Technical Information GenX3TM 600V IGBT IXGH56N60B3 Obsolete Part Number VCES = IC110 = VCE(sat) ≤ 600V 56A 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM e IC25 IC110 t ICM SSOA (RBSOA) le Pd TJ TJM Tstg o TL TSOLD Md s Weight TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Indu.

IXGH56N60B3 Features

* z Optimized for Low Conduction and Switching Losses z Square RBSOA z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS BVCES IC = 250μA, VCE = 0V 600 V z PFC Circuits VGE(th) ICES IC = 250μA,

IXGH56N60B3-IXYS.pdf