IXGH56N60A3 Datasheet - IXYS

IXGH56N60A3 Ultra-Low Vsat PT IGBT

Advance Technical Information GenX3TM 600V IGBT IXGH56N60A3 VCES = IC110 = VCE(sat) ≤ 600V 56A 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching Symbol Test Conditions VCES VCGR VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load Pd TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic .

IXGH56N60A3 Features

* z Optimized for Low Conduction Losses z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits ©

IXGH56N60A3-IXYS.pdf