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IXSK35N120AU1 Datasheet - IXYS Corporation

IXSK35N120AU1 - High Voltage IGBT

High Voltage IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 22 W, non repetitive TC =

IXSK35N120AU1 Features

* International standard package JEDEC TO-264 AA

* High frequency IGBT and anti-parallel FRED in one package

* 2nd generation HDMOSTM process

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity

* Fast Recovery

IXSK35N120AU1_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXSK35N120AU1

Manufacturer:

IXYS Corporation

File Size:

72.88 KB

Description:

High voltage igbt.

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IXSK35N120AU1 High Voltage IGBT IXYS Corporation