IXSK35N120AU1 Datasheet - IXYS Corporation

IXSK35N120AU1, High Voltage IGBT

High Voltage IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V www.DataSheet4U.com Sym.

datasheet Preview Page 1 from Datasheet4u.com

IXSK35N120AU1_IXYSCorporation.pdf

IXSK35N120AU1 Datasheet Preview — Preview of IXSK35N120AU1 PDF

Datasheet Details

Part number:

IXSK35N120AU1

Manufacturer:

IXYS Corporation

File Size:

72.88 KB

Description:

High Voltage IGBT

Features

* International standard package JEDEC TO-264 AA
* High frequency IGBT and anti-parallel FRED in one package
* 2nd generation HDMOSTM process
* Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive simplicity
* Fast Recovery

Applications

* 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/13 10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 750 15 ±100 4 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 5 mA, VGE = 0 V = 4 mA,

IXSK35N120AU1 Distributors

📁 Related Datasheet

IXSH10N60B2D1 IXSH15N120B IXSH16N60U1 IXSH20N60 IXSH20N60A IXSH20N60B2D1

📌 All Tags

IXSK35N120AU1 High Voltage IGBT IXYS Corporation

IXYS Corporation IXSK35N120AU1-like datasheet