IXSK35N120AU1 High Voltage IGBT

IXYS Corporation

Description

High Voltage IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V www.DataSheet4U.com Sym.

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Datasheet Specifications

Part number: IXSK35N120AU1
Manufacturer: IXYS Corporation
File Size: 72.88 KB
Datasheet: IXSK35N120AU1_IXYSCorporation.pdf
Description: High Voltage IGBT

Features

* International standard package JEDEC TO-264 AA
* High frequency IGBT and anti-parallel FRED in one package
* 2nd generation HDMOSTM process
* Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive simplicity
* Fast Recovery

Applications

* 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/13 10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25°C TJ = 125°C 8 750 15 ±100 4 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 5 mA, VGE = 0 V = 4 mA,

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IXSK35N120AU1 High Voltage IGBT IXYS Corporation

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