IXSK40N60CD1 Datasheet - IXYS Corporation

IXSK40N60CD1 - IGBT

IGBT with Diode PLUS247 TM package IXSK 40N60CD1 IXSX 40N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE(sat) tfi(typ) = = = = 600 V 75 A 2.5 V 70 ns Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V.

IXSK40N60CD1 Features

* International standard packages

* Guaranteed Short Circuit SOA capability

* High frequency IGBT and antiparallel FRED in one package

* Latest generation HDMOSTM process

* MOS Gate turn-on - drive simplicity

* Fast Recovery,low leakage Epitaxial Diode

IXSK40N60CD1_IXYSCorporation.pdf