IXSK50N60BU1 Datasheet - IXYS Corporation

IXSK50N60BU1 IGBT

www.DataSheet4U.com IGBT with Diode Short Circuit SOA Capability IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.5 V PLUS247 (IXSX) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 2.

IXSK50N60BU1 Features

* International standard package JEDEC TO-264 AA, and hole-less TO-247 package for clip mounting

* Guaranteed Short Circuit SOA capability

* High frequency IGBT and antiparallel FRED in one package

* Latest generation HDMOSTM process

* Low VCE(sat) - for minim

IXSK50N60BU1_IXYSCorporation.pdf