IXSK50N60AU1 Datasheet - IXYS Corporation

IXSK50N60AU1 IGBT

IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK 50N60AU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.7 V www.DataSheet4U.com Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C, limited by leads T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 V.

IXSK50N60AU1 Features

* q q q q q Mounting torque 0.9/6 Nm/lb.in. 10 300 g °C q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-264 AA Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package 2nd generati

IXSK50N60AU1_IXYSCorporation.pdf