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IXSP10N60B2D1 Datasheet - IXYS Corporation

IXSP10N60B2D1 High Speed IGBT

High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @.

IXSP10N60B2D1 Features

* International standard packages

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast fall time for switching speeds up to 20 kHz

IXSP10N60B2D1 Datasheet (622.70 KB)

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Datasheet Details

Part number:

IXSP10N60B2D1

Manufacturer:

IXYS Corporation

File Size:

622.70 KB

Description:

High speed igbt.

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IXSP10N60B2D1 High Speed IGBT IXYS Corporation

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