IXSP10N60B2D1, IXSA10N60B2D1 Datasheet - IXYS Corporation

IXSP10N60B2D1 High Speed IGBT

High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @.

IXSP10N60B2D1 Features

* International standard packages

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast fall time for switching speeds up to 20 kHz

IXSA10N60B2D1_IXYSCorporation.pdf

IXSP10N60B2D1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXSP10N60B2D1, IXSA10N60B2D1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXSP10N60B2D1, IXSA10N60B2D1

Manufacturer:

IXYS Corporation

File Size:

622.70 KB

Description:

High speed igbt.

Note:

This datasheet PDF includes multiple part numbers: IXSP10N60B2D1, IXSA10N60B2D1.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IXSP15N120B High Voltage IGBT (IXYS Corporation)

IXSP16N60 Short Circuit SOA Capability (IXYS Corporation)

IXSP20N60B2 High Speed IGBT (IXYS)

IXSP20N60B2D1 High Speed IGBT (IXYS)

IXSP24N60B High Speed IGBT (IXYS)

IXSA10N60B2D1 High Speed IGBT (IXYS Corporation)

IXSA15N120B High Voltage IGBT (IXYS Corporation)

IXSA16N60 Short Circuit SOA Capability (IXYS Corporation)

TAGS

IXSP10N60B2D1 IXSA10N60B2D1 High Speed IGBT IXYS Corporation

IXSP10N60B2D1 Distributor