High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet www.DataSheet4U.com IXSA 10N60B2D1 IXSP 10N60B2D1 VCES = 600 V = 20 A I C25 V CE(sat) = 2.5 V D1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load, VGE = 20 V VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 150 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 20 10 11 30 ICM = 20 @
IXSA10N60B2D1_IXYSCorporation.pdf
Datasheet Details
Part number:
IXSP10N60B2D1, IXSA10N60B2D1
Manufacturer:
IXYS Corporation
File Size:
622.70 KB
Description:
High speed igbt.
Note:
This datasheet PDF includes multiple part numbers: IXSP10N60B2D1, IXSA10N60B2D1.
Please refer to the document for exact specifications by model.