IXSP15N120B Datasheet - IXYS Corporation

IXSP15N120B High Voltage IGBT

Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B "S" Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30 A = 3.4 V Symbol www.DataSheet4U.com V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load Maximum Ratings 1200 1200 ± 20 ± 30 30 15 60 ICM = 40 @ 0.8 VCES 10 150 -55 +150 150 -55 +150 V V V V A A A A µs W °C °C °C.

IXSP15N120B Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Weight (TO-263) TO-220 TO-263

* International 260 4 2

* Low switching losses, low V

* MOS Gate turn-on - drive simplicity Applications standard packages JED

IXSP15N120B Datasheet (116.42 KB)

IXSP15N120B Datasheet Preview — Preview of IXSP15N120B PDF

Datasheet Details

Part number:

IXSP15N120B

Manufacturer:

IXYS Corporation

File Size:

116.42 KB

Description:

High voltage igbt.

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IXSP15N120B High Voltage IGBT IXYS Corporation

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