IXSP24N60B Datasheet - IXYS

IXSP24N60B - High Speed IGBT

High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSP 24N60B VCES IC25 V CE(sat) = 600 V = 48 A = 2.5 V tfi typ = 170 ns Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC T J TJM Tstg Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms V= GE 15 V, T J = 125°C, R G = 33 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non r

IXSP24N60B Features

* z International standard packages z Guaranteed Short Circuit SOA capability z Low VCE(sat) - for low on-state conduction losses z High current handling capability z MOS Gate turn-on - drive simplicity z Fast Fall Time for switching speeds up to 50 kHz Symbol BVCES VGE(th) ICES I GES VCE(sat) Test

IXSP24N60B-IXYS.pdf

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Datasheet Details

Part number:

IXSP24N60B

Manufacturer:

IXYS

File Size:

67.42 KB

Description:

High speed igbt.

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IXSP24N60B High Speed IGBT IXYS