IXTA7N60PM Datasheet, MOSFET, IXYS Corporation

IXTA7N60PM Features

  • Mosfet g V V Ω r e .n a ww 600 3.0 TJ = 125°C ua 300 260 1.13/10 2.5 Characteristic Values Min. Typ. Max. 5.5 1.1 - 55 +150 150 - 55 +150 ce. °C °C °C °C °C Nm/lb.in. Plastic overmolded

PDF File Details

Part number:

IXTA7N60PM

Manufacturer:

IXYS Corporation

File Size:

197.81kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: IXTA7N60PM 📥 Download PDF (197.81kb)
Page 2 of IXTA7N60PM Page 3 of IXTA7N60PM

IXTA7N60PM Application

  • Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supp

TAGS

IXTA7N60PM
Power
MOSFET
IXYS Corporation

📁 Related Datasheet

IXTA7N60P - Power MOSFET (IXYS)
PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RDS(on) ≤ 1.1 Ω Symbol VDSS V D.

IXTA7N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 1.1Ω@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTA70N075T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA70N075T2 IXTP70N075T2 VDSS = ID25 = RDS(on) ≤ 75V 70A 12mΩ TO-263 (IXTA) S.

IXTA70N075T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA70N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTA70N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche voltage and cur.

IXTA70N085T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(o.

IXTA75N10P - N-Channel MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 m.

IXTA75N10P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lo.

IXTA76N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.

IXTA76N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts