IXTA75N10P Datasheet, MOSFET, IXYS

IXTA75N10P Features

  • Mosfet l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High p

PDF File Details

Part number:

IXTA75N10P

Manufacturer:

IXYS

File Size:

294.27kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IXTA75N10P 📥 Download PDF (294.27kb)
Page 2 of IXTA75N10P Page 3 of IXTA75N10P

TAGS

IXTA75N10P
N-Channel
MOSFET
IXYS

📁 Related Datasheet

IXTA75N10P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lo.

IXTA70N075T2 - Power MOSFET (IXYS)
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA70N075T2 IXTP70N075T2 VDSS = ID25 = RDS(on) ≤ 75V 70A 12mΩ TO-263 (IXTA) S.

IXTA70N075T2 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTA70N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·Fully characterized avalanche vol.

IXTA70N085T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche voltage and cur.

IXTA70N085T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(o.

IXTA76N075T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.

IXTA76N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on).

IXTA76N25T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.

IXTA76N25T - Power MOSFET (IXYS)
TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanc.

IXTA76P10T - Power MOSFET (IXYS)
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID2.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts