Description
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID2.
Features
* International Standard Packages
* Avalanche Rated
* Extended FBSOA
* Fast Intrinsic Diode
* Low RDS(ON) and QG
Advantages
* Easy to Mount
Applications
* High-Side Switching
* Push Pull Amplifiers
* DC Choppers
* Automatic Test Equipment
* Current Regulators
* Battery Charger Applications
DS100024C(9/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5
* ID25, Note 1
Ciss