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IXTA7N60P - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTA7N60P
Manufacturer	IXYS
File Size	173.38 KB
Description	Power MOSFET
Datasheet	IXTA7N60P_IXYS.pdf

IXTA7N60P Product details

Features

l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 600 V V GS(th) V DS = V, GS I D = 100µA 3.0 5.5 V IGSS VGS = ±30 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 5 µA 50 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2.

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Published: Jun 12, 2010 |