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IXTA7N60P Datasheet - IXYS

Power MOSFET

IXTA7N60P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 600 V V GS(th) V DS = V,

IXTA7N60P Datasheet (173.38 KB)

Preview of IXTA7N60P PDF

Datasheet Details

Part number:

IXTA7N60P

Manufacturer:

IXYS

File Size:

173.38 KB

Description:

Power mosfet.
PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RDS(on) ≤ 1.1 Ω Symbol VDSS V D.

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IXTA7N60P Power MOSFET IXYS

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