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IXTA7N60P Power MOSFET

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Description

PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 7A RDS(on) ≤ 1.1 Ω Symbol VDSS V D.

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Datasheet Specifications

Part number
IXTA7N60P
Manufacturer
IXYS
File Size
173.38 KB
Datasheet
IXTA7N60P_IXYS.pdf
Description
Power MOSFET

Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 600 V V GS(th) V DS = V,

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