IXTA70N075T2
IXYS
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Power mosfet.
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IXTA70N075T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA70N075T2
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 12mΩ@VGS=10V ·Fully characterized avalanche vol.
IXTA70N085T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 13.5mΩ@VGS=10V ·Fully characterized avalanche voltage and cur.
IXTA70N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA70N085T IXTP70N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = 85
ID25
RDS(o.
IXTA75N10P - N-Channel MOSFET
(IXYS)
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA 75N10P IXTP 75N10P IXTQ 75N10P
V
= 100 V
DSS
ID25
= 75 A
≤ RDS(on)
25 m.
IXTA75N10P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lo.
IXTA76N075T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 12mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.
IXTA76N075T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA76N075T IXTP76N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
IXTA76N25T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA76N25T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
N-Channel Enhancement Mode
IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T
VDSS = ID25 =
RDS(on)
250V 76A 44m
Typical Avalanc.
IXTA76P10T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T
D
G S
Symbol
VDSS VDGR
VGSS VGSM
ID2.
