* / Advantages:
* Planar passivated chips
* Low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
* Lo
DSEI30-12A Datasheet (331.87 KB)
DSEI30-12A
IXYS
331.87 KB
Fast recovery epitaxial diode.
FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI30-12A
3
1
DSEI30-12A
VRRM = 1200 V
I FAV
=
30 A
t rr
=
50 ns
Backside: cat.
📁 Related Datasheet
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Part number
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3
1
DSEI30-10A
VRRM = 1000 V
I FAV
=
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t rr
=
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Backside: cat.
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I FAV
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t rr
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DSEI30-06A - Fast Recovery Epitaxial Diode
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Fast Recovery Epitaxial Diode (FRED)
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IFAVM = 37 A VRRM = 600 V trr = 35 ns
VRSM V
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TO-247 AD
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C A
A = .
DSEI30 - Fast Recovery Epitaxial Diode
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Fast Recovery Epitaxial Diode (FRED)
DSEI 30
IFAVM = 30 A VRRM = 1000 V trr = 35 ns
VRSM V 1000 1000
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Fast Recovery Epitaxial Diode (FRED)
DSEI 36-06AS
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VRRM V
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DSEI12 - Fast Recovery Epitaxial Diode
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Fast Recovery Epitaxial Diode (FRED)
DSEI 12
IFAVM = 14 A VRRM = 600 V trr = 35 ns
VRSM V 640
VRRM V 600
Type
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DSEI 12-06A A.
DSEI12-06A - Ultrafast Rectifier
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Ultrafast Rectifier
DSEI12-06A
FEATURES ·Ultrafast recovery time ·Popular TO-220 package ·Low forward drop ·Avalanche energy rated ·Minimum Lot-to-L.
DSEI12-06A - Fast Recovery Epitaxial Diode
(IXYS Corporation)
FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI12-06A
3
1
DSEI12-06A
VRRM =
I FAV
=
t rr
=
600 V 14 A 35 ns
Backside: catho.
