DSEI30 Datasheet - IXYS

DSEI30, Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 30 A VRRM = 1000 V trr = 35 ns VRSM V 1000 1000 VRRM V 1000 1000 Type A C TO-247 AD Versi.

Features

* q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine q q q International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recover

Applications

* q q q q q q q q Symbol Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 36 A; Characteristic Values typ. max. 750 250 7 2 2.4 1.5 12.5 0.9 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling

DSEI30-IXYS.pdf