DSEI36-06AS Datasheet - IXYS

DSEI36-06AS - Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 36-06AS VRRM = 600 V IFAVM = 37 A trr = 35 ns VRSM V 600 VRRM V 600 Type DSEI 36-06AS TO-263 AB AC A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM 1 IFRM IFSM I2t T VJ T VJM T stg Ptot Weight Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 μs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ.

DSEI36-06AS Features

* z International standard surface mount package JEDEC TO-263 AB z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low I -values RM z Soft recovery behaviour z Epoxy meets UL 94V-0 TO-263 AB Outline Symbol Test Conditions Characteristic Values typ. max. IR VF

DSEI36-06AS-IXYS.pdf

DSEI36-06AS Datasheet Preview — Preview of DSEI36-06AS PDF

Datasheet Details

Part number:

DSEI36-06AS

Manufacturer:

IXYS

File Size:

101.75 KB

Description:

Fast recovery epitaxial diode.

DSEI36-06AS Distributor

📁 Related Datasheet

DSEI30 DSEI30-06A DSEI30-10A DSEI30-10AR DSEI30-12A DSEI12

📌 All Tags

DSEI36-06AS Fast Recovery Epitaxial Diode IXYS