Datasheet4U Logo Datasheet4U.com

IXBOD1 Breakover Diode Gen

IXBOD1 Description

Breakover Diode Gen1 (BOD1) IXBOD1 VBO = 600-1000 V IAVM = 0.9 A VBO [V] 600 ±50 700 ±50 800 ±50 900 ±50 1000 ±50 Standard Types IXBOD1-06 IXBOD.

IXBOD1 Features

* / Advantages:
* Very low forward voltage drop

IXBOD1 Applications

* High voltage circuit protection
* Transient voltage protection
* Trigger device
* Power pulse generators
* Lightning and arcing protection
* Energy discharge circuits
* Battery overvoltage protection
* Solar array protection Package

📥 Download Datasheet

Preview of IXBOD1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IXBOD1
Manufacturer
IXYS
File Size
149.73 KB
Datasheet
IXBOD1-IXYS.pdf
Description
Breakover Diode Gen

📁 Related Datasheet

  • IXBD4410 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBD4411 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBF9N140 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBF9N160 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBH10N170 - Bipolar MOS Transistor (IXYS Corporation)
  • IXBH15N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBH16N170A - Bipolar MOS Transistor (IXYS Corporation)

📌 All Tags

Breakover Diode Gen IXYS
IXYS IXBOD1-like datasheet