PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS = ID25 = ≤ RDS(on) trr ≤ 500V 36A 170mΩ 200ns PLUS220SMD (IXFVS) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC =
Datasheet Details
Part number:
IXFH36N50P
Manufacturer:
IXYS
File Size:
212.82 KB
Description:
N-channel power mosfet.