IXFH36N50P Datasheet - IXYS

IXFH36N50P N-Channel Power MOSFET

PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS = ID25 = ≤ RDS(on) trr ≤ 500V 36A 170mΩ 200ns PLUS220SMD (IXFVS) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = .

IXFH36N50P Features

* z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings © 2011 IXYS CORPORATION, All Rights Reserved DS99364F(07/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5

IXFH36N50P_IXYS.pdf