IXFH36N60P Datasheet - IXYS

IXFH36N60P - Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS(on) t rr = 600 V = 36 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25.

IXFH36N60P Features

* D = Drain Tab = Drain Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 100 1000 190 V V nA µA µA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID

IXFH36N60P_IXYS.pdf

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Datasheet Details

Part number:

IXFH36N60P

Manufacturer:

IXYS

File Size:

139.05 KB

Description:

Power mosfet.

IXFH36N60P Distributor

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IXFH36N60P Power MOSFET IXYS