Datasheet Details
- Part number
- IXFH36N60P
- Manufacturer
- IXYS
- File Size
- 139.05 KB
- Datasheet
- IXFH36N60P_IXYS.pdf
- Description
- Power MOSFET
IXFH36N60P Description
Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preli.IXFH36N60P Features
* D = Drain Tab = Drain Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 100 1000 190 V V nA µA µA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID📁 Related Datasheet
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