IXFH36N60X3 Datasheet - IXYS

IXFH36N60X3 Power MOSFET

X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH36N60X3 D G S VDSS = ID25 =  RDS(on) 600V 36A 90m TO-247 (IXFH) Symbol VDSS V DGR V GSS VGSM ID25 IDM I A E AS dv/dt P D TJ T JM Tstg T L Md Weight Test Conditions TJ = 25C to 150C T J = 25C to 150C, R GS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM T C = 25C T C = 25C IS  IDM, VDD  VDSS, TJ  150°C T C = 25C Maximum Lead Temperature for Soldering 1.6.

IXFH36N60X3 Features

* International Standard Package

* Low R and Q DS(ON) G

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circ

IXFH36N60X3-IXYS.pdf

IXFH36N60X3 Datasheet Preview — Preview of IXFH36N60X3 PDF

Datasheet Details

Part number:

IXFH36N60X3

Manufacturer:

IXYS

File Size:

596.53 KB

Description:

Power mosfet.

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IXFH36N60X3 IXFH36N60X3 Power MOSFET IXYS

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