IXFH44N50P Datasheet - IXYS

IXFH44N50P Power MOSFET

PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT44N50P IXFH44N50P IXFK44N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247&.

IXFH44N50P Features

* International Standard Packages

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Co

IXFH44N50P Datasheet (146.96 KB)

IXFH44N50P Datasheet Preview — Preview of IXFH44N50P PDF

Datasheet Details

Part number:

IXFH44N50P

Manufacturer:

IXYS

File Size:

146.96 KB

Description:

Power mosfet.

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IXFH44N50P Power MOSFET IXYS

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