IXFH400N075T2 Datasheet - IXYS Corporation

Power MOSFET

Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH400N075T2 IXFT400N075T2 VDSS ID25 RDS(on) = 75V = 400A ≤ 2.3mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25.

Power MOSFET

IXFH400N075T2 Features

* z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 Characteristic Values Min. Typ. Max. 75 2.0 4.0 ±200 25 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated

IXFH400N075T2 Datasheet (204.23 KB)