IXFH40N50Q2 Datasheet - IXYS Corporation

IXFH40N50Q2 Power MOSFET

HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr VDSS = 500V ID25 = 40A RDS(on) ≤ 160mΩ trr ≤ 250ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.063 in.

IXFH40N50Q2 Features

* Double metal process for low gate resistance International standard package Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse

IXFH40N50Q2_IXYSCorporation.pdf