Datasheet4U.com

IXFH4N100Q - Power MOSFET

IXYS

📥 Download Datasheet

IXFH4N100Q Datasheet Preview — Preview of IXFH4N100Q PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXFH4N100Q
Manufacturer	IXYS
File Size	117.93 KB
Description	Power MOSFET
Datasheet	IXFH4N100Q_IXYS.pdf

IXFH4N100Q Product details

Features

IXYS advanced low Qg process.
Low gate charge and capacitances - easier to drive - faster switching.
International standard packages.
Low RDS (on).
Unclamped Inductive Switching (UIS) rated.
Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 ±100 TJ = 25°C TJ = 125°C 50 1 3.0 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(o.

📁 IXFH4N100Q Similar Datasheet

IXFH400N075T2 - Power MOSFET (IXYS Corporation)
IXFH40N30 - Power MOSFET (IXYS Corporation)
IXFH40N50Q - Power MOSFET (IXYS Corporation)
IXFH40N50Q2 - Power MOSFET (IXYS Corporation)
IXFH42N20 - Power MOSFET (IXYS Corporation)
IXFH42N50P2 - Power MOSFET (IXYS Corporation)
IXFH42N60P3 - Power MOSFET (IXYS Corporation)
IXFH42N65X2A - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS

IXFH40N30Q - Power MOSFETs
IXFH40N85X - Power MOSFET
IXFH44N50P - Power MOSFET
IXFH46N65X2 - Power MOSFET
IXFH100N25P - PolarHT HiPerFET Power MOSFET
IXFH100N30X3 - N-Channel Power MOSFET

Published: Aug 20, 2013 |