* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive - faster switching
* International standard packages
* Low RDS (on)
* Unclamped Inductive Switching (UIS) rated
* Molding epoxies meet UL 94 V-0 flammability classifica
IXFH4N100Q Datasheet (117.93 KB)
IXFH4N100Q
IXYS
117.93 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 .
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