IXFH40N30Q Datasheet - IXYS

IXFH40N30Q Power MOSFETs

HiPerFETTM Power MOSFETs Q-Class Not for New Designs IXFH40N30Q IXFT40N30Q VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plast.

IXFH40N30Q Features

* z International Standard Packages z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplie

IXFH40N30Q-IXYS.pdf