IXFH42N65X2A N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH42N65X2A *.

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Datasheet Specifications

Part number: IXFH42N65X2A
Manufacturer: INCHANGE
File Size: 319.82 KB
Datasheet: IXFH42N65X2A-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 72mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 42 A IDM Drain Current-Single Pulsed 90 A PD Total Dissipation 660 W Tj Operating Juncti

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IXFH42N65X2A N-Channel MOSFET INCHANGE

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