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IXFH42N60P3 Datasheet - IXYS Corporation

IXFH42N60P3 - Power MOSFET

Polar3TMHiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH42N60P3 D G S VDSS = ID25 = RDS(on)  600V 42A 185m TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.0

IXFH42N60P3 Features

* International Standard Package

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Conv

IXFH42N60P3_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH42N60P3

Manufacturer:

IXYS Corporation

File Size:

631.90 KB

Description:

Power mosfet.

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IXFH42N60P3 Power MOSFET IXYS Corporation