IXFH80N60X2A Datasheet - IXYS

IXFH80N60X2A - Power MOSFET

Advance Technical Information X2-Class HiPerFETTM Power MOSFET AEC Q101 Qualified IXFH80N60X2A VDSS = ID25 =  RDS(on) 600V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum .

IXFH80N60X2A Features

* International Standard Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VG

IXFH80N60X2A-IXYS.pdf