IXFH80N60X2A Datasheet - IXYS

IXFH80N60X2A Power MOSFET

Advance Technical Information X2-Class HiPerFETTM Power MOSFET AEC Q101 Qualified IXFH80N60X2A VDSS = ID25 =  RDS(on) 600V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum .

IXFH80N60X2A Features

* International Standard Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VG

IXFH80N60X2A-IXYS.pdf

IXFH80N60X2A Datasheet Preview — Preview of IXFH80N60X2A PDF

Datasheet Details

Part number:

IXFH80N60X2A

Manufacturer:

IXYS

File Size:

177.23 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFH80N60X2A N-Channel MOSFET (INCHANGE)

IXFH80N65X2 Power MOSFET (IXYS)

IXFH80N65X2 N-Channel MOSFET (INCHANGE)

IXFH80N08 Power MOSFET (IXYS)

IXFH80N085 Power MOSFET (IXYS Corporation)

IXFH80N10 Power MOSFET (IXYS Corporation)

IXFH80N10Q HiPerFET Power MOSFETs (IXYS Corporation)

IXFH80N15Q Power MOSFET (IXYS Corporation)

TAGS

IXFH80N60X2A IXFH80N60X2A Power MOSFET IXYS

IXFH80N60X2A Distributor