IXFK33N50 Datasheet (IXYS)

IXFK33N50, Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr IXFK33N50 IXFX35N50 VDSS 500V ID25 33A 35A RDS(on) 160m 150m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V  20 V  30 V TC = 25C 33N50 33 A 35N50 35 A TC = 25C, Pulse Width Limited by TJM 33N50 132 A 35N50 140

IXFK33N50 Features

* International Standard Packages

* Avalanche Rated

* Low Intrinsic Gate Resistance

* Low Package Inductance

* Fast Intrinsic Rectifier

* Molding epoxies meet UL 94 V-0 flammability classification

* Low RDS (on) HDMOSTM process Advantages

* High Power Density

* Ea