IXFK33N50 Datasheet - IXYS

IXFK33N50 Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr IXFK33N50 IXFX35N50 VDSS 500V ID25 33A 35A RDS(on) 160m 150m TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V  20 V  30 V TC = 25C 33N50 33 A 35N50 35 A TC = 25C, Pulse Width Limited by TJM 33N50 132 A 35N50 140 .

IXFK33N50 Features

* International Standard Packages

* Avalanche Rated

* Low Intrinsic Gate Resistance

* Low Package Inductance

* Fast Intrinsic Rectifier

* Molding epoxies meet UL 94 V-0 flammability classification

* Low RDS (on) HDMOSTM process Advantages

* High Power Density

* Ea

IXFK33N50 Datasheet (196.94 KB)

IXFK33N50 Datasheet Preview — Preview of IXFK33N50 PDF

Datasheet Details

Part number:

IXFK33N50

Manufacturer:

IXYS

File Size:

196.94 KB

Description:

Power mosfets.

📁 Related Datasheet

IXFK30N100Q2 Power MOSFET (IXYS Corporation)

IXFK30N50Q Power MOSFET (IXYS Corporation)

IXFK320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)

IXFK32N100P Power MOSFET (IXYS)

IXFK32N100Q3 Power MOSFET (IXYS)

IXFK32N100X Power MOSFET (IXYS)

IXFK32N50Q Power MOSFET (IXYS)

TAGS

IXFK33N50 Power MOSFETs IXYS

IXFK33N50 Distributor