* z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Synchronous Recification z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Po
IXFK360N10T Datasheet (183.77 KB)
IXFK360N10T
IXYS
183.77 KB
Power mosfet.
Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N1.
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