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IXGT2N250, IXGH2N250 High Voltage IGBT

IXGT2N250 Description

Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V .

IXGT2N250 Features

* z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8
* VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC11

IXGT2N250 Applications

* IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V TO-247 (IXGH) Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 50Ω Clamped I

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXGT2N250, IXGH2N250. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXGT2N250, IXGH2N250
Manufacturer
IXYS
File Size
184.81 KB
Datasheet
IXGH2N250-IXYS.pdf
Description
High Voltage IGBT
Note
This datasheet PDF includes multiple part numbers: IXGT2N250, IXGH2N250.
Please refer to the document for exact specifications by model.

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