IXGT2N250, IXGH2N250 Datasheet - IXYS

IXGT2N250 High Voltage IGBT

Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V TO-247 (IXGH) Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 50Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for .

IXGT2N250 Features

* z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8

* VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC11

IXGH2N250-IXYS.pdf