IXGX82N120B3, IXGK82N120B3 Datasheet - IXYS

IXGX82N120B3 High-Speed Low-Vsat PT IGBT

Advance Technical Information GenX3TM 1200V IGBTs IXGK82N120B3 IXGX82N120B3 High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching VCES = IC110 = VCE(sat) ≤ 1200V 82A 3.20V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C ( Lead RMS .

IXGX82N120B3 Features

* z Optimized for Low Conduction and Switching Losses z Square RBSOA z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z SMPS z PFC Circuits z Welding Machines z Lamp Ballasts © 2009 IXYS COR

IXGK82N120B3-IXYS.pdf