IXTA160N04T2 - Power MOSFET
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 40 V 40 V 20 V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 160 120 400 80 600 250 -55 +175 175 -55 +175 A A A A mJ W C C C Maximum Lead
IXTA160N04T2 Features
* International Standard Packages
* Avalanche Rated
* Low Package Inductance
* Fast Intrinsic Rectifier 175°C Operating Temperature
* High Current Handling Capability
* ROHS Compliant
* High Performance Trench Technology for extremely low RDS(on) Advantages
* High Pow