IXYS manufacturer logo Part number: IXTA34N65X2 Manufacturer: IXYS File Size: 208.79 KB Download: 📄 Datasheet Description: Power mosfet.
IXTA34N65X2 Datasheet PDF IXTA34N65X2, INCHANGE isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 96mΩ@VGS= 10V ·Fast.
IXTA340N04T4 Datasheet PDF IXTA340N04T4, IXYS TrenchT4TM Power MOSFET Preliminary Technical Information IXTA340N04T4 IXTA340N04T4-7 VDSS = ID25 = RDS(on) 40V 340A 1.7m N-Channel Enhancemen.
IXTA300N04T2 Datasheet PDF IXTA300N04T2, INCHANGE isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA300N04T2 Datasheet PDF IXTA300N04T2, IXYS TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA300N04T2 IXTP300N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM.
IXTA32N20T Datasheet PDF IXTA32N20T, INCHANGE isc N-Channel MOSFET Transistor IXTA32N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 78mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTA32N20T Datasheet PDF IXTA32N20T, IXYS TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID25 = 32A RDS(on) ≤ 78mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifi.
IXTA32P05T Datasheet PDF IXTA32P05T, IXYS TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY32P05T IXTA32P05T IXTP32P05T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ .
IXTA32P05T Datasheet PDF IXTA32P05T, INCHANGE isc P-Channel MOSFET Transistor IXTA32P05T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤39mΩ ·100% avalanche tested ·Minimum Lot-to-Lot var.
